Evaluation of SiC Schottky diodes using pressure contacts
- Submitting institution
-
University of Greenwich
- Unit of assessment
- 12 - Engineering
- Output identifier
- 17115
- Type
- D - Journal article
- DOI
-
10.1109/TIE.2017.2677348
- Title of journal
- IEEE Transactions on Industrial Electronics
- Article number
- -
- First page
- 8213
- Volume
- 64
- Issue
- 10
- ISSN
- 0278-0046
- Open access status
- Compliant
- Month of publication
- -
- Year of publication
- 2017
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
7
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Funded through EPSRC (EP/K034804/1, the paper is significant, as its first study to compare packaged SiC Diodes with copper and DBC substrates, and highlights the benefits of press-pack assembly. The work detailed in this paper was presented at an invited Keynote talk at the IEEE Pan-Pacific Conference in 2016. Moving from Silicon to Silicon carbide has significant benefits for energy efficiency and electronics operating in high temperatures. The work also contributed to our award of a new EPSRC project (EP/R004390/1)..
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
