10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field
- Submitting institution
-
University of Nottingham, The
- Unit of assessment
- 12 - Engineering
- Output identifier
- 4055754
- Type
- D - Journal article
- DOI
-
10.1109/tpel.2019.2952633
- Title of journal
- IEEE Transactions on Power Electronics
- Article number
- -
- First page
- 6050
- Volume
- 35
- Issue
- 6
- ISSN
- 0885-8993
- Open access status
- Compliant
- Month of publication
- November
- Year of publication
- 2019
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
4
- Research group(s)
-
T - Power Electronics Machines & Control
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This work results from a US/UK/China collaboration involving Virginia Tech and Tianjin University, partly funded by the EPSRC (EP/K035304/1). This paper presents a breakthrough in the packaging of Silicon Carbide power semiconductors and received best paper awards at ECCE2018 (Portland, Oregon) and CIPS2018 (Stuttgart) conferences, and further invited presentations at ISPS2018 (Prague) as well as an industry-led ECPE workshop (Hamburg, 2019). It resulted in US patent (US10032732B1) and has attracted attention from US and European power module manufacturers (including Dynex (contact: Vice Director RDC)).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
