Single step ohmic contact for heavily doped n-type silicon
- Submitting institution
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De Montfort University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 12110
- Type
- D - Journal article
- DOI
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10.1016/j.apsusc.2019.144686
- Title of journal
- Applied Surface Science
- Article number
- 144686
- First page
- -
- Volume
- 506
- Issue
- -
- ISSN
- 0169-4332
- Open access status
- Compliant
- Month of publication
- -
- Year of publication
- 2019
- URL
-
-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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3
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The method proposed in this article was successfully used by Das et al. (arXiv:2009.03659v1) to verify the characteristics of their solar-cell device and by Sun et al. (https://doi.org/10.1109/TED.2020.3037880) to develop a novel analytical model for ohmic contacts. It was featured by Advances in Engineering (https://advanceseng.com/single-step-ohmic-contact-heavily-doped-n-type-silicon/) as a key article that could inspire new research directions, stating: "Remarkably, the study introduced a new approach that circumvents the use of alloys, hence completely eliminating annealing process and enabling the ohmic contact fabrication process to be conducted at room temperatures."
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -