A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
- Submitting institution
-
University of Nottingham, The
- Unit of assessment
- 12 - Engineering
- Output identifier
- 3919024
- Type
- D - Journal article
- DOI
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10.1109/JESTPE.2019.2942714
- Title of journal
- IEEE Journal of Emerging and Selected Topics in Power Electronics
- Article number
- -
- First page
- 54
- Volume
- 8
- Issue
- 1
- ISSN
- 2168-6777
- Open access status
- Technical exception
- Month of publication
- September
- Year of publication
- 2019
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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6
- Research group(s)
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T - Power Electronics Machines & Control
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Sponsored by H2020-CHALLENGE (EC 10.13039/501100000780), this research is the first to explain physical mechanisms responsible for high leakage current in 3C-SiC-on-Si Schottky diodes and the profile of traps involved.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
