A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)
- Submitting institution
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The University of Sheffield
- Unit of assessment
- 12 - Engineering
- Output identifier
- 7783
- Type
- D - Journal article
- DOI
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10.1021/acsphotonics.9b01351
- Title of journal
- ACS Photonics
- Article number
- -
- First page
- 411
- Volume
- 7
- Issue
- 2
- ISSN
- 2330-4022
- Open access status
- Compliant
- Month of publication
- January
- Year of publication
- 2020
- URL
-
-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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6
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The paper reports a fundamentally different epitaxial approach for manufacturing ultra-small/compact/bright micro-LEDs based on a selective overgrowth method, which yielded a 3.6 micrometre dimension and 2 micrometre interpitch. Extensive measurements confirmed the highest ever achieved external quantum efficiencies in such devices. The technology led to three patents filed, which will be commercialised via EpiPix, a spin-out company formed with a £250K CCF grant. Further commercialisation of the technology is progressing based on NDAs with global companies including Microsoft, Apple, Facebook, Plessey, Sony, etc. Based on the technology, EPSRC has funded £1.3M of further research (EP/T01265X/1, EP/T012692/1, EP/T013001/1).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -