Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
- Submitting institution
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University of Portsmouth
- Unit of assessment
- 12 - Engineering
- Output identifier
- 7106224
- Type
- D - Journal article
- DOI
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10.1016/j.actamat.2015.07.035
- Title of journal
- Acta Materialia
- Article number
- -
- First page
- 240
- Volume
- 99
- Issue
- -
- ISSN
- 1359-6454
- Open access status
- Out of scope for open access requirements
- Month of publication
- August
- Year of publication
- 2015
- URL
-
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- Supplementary information
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- Request cross-referral to
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- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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9
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This fundamental work represents a coordinated international effort between institutions in China, UK and Germany, to advance our ability to integrate silicon electronics with functional ferroelectrics. This paper is important because it reports the successful synthesis of silicon doped HfO2 thin film ferroelectrics (Si:HfO2) and it demonstrates their applicability to non-volatile random access memories suitable for 5V-USB electronics. This work has since been used in numerous fundamental and applied studies (e.g. Science, vol. 369, 6509, pp. 1343-1347 (2020); Adv. Electron. Mater. 6, 2000264 (2020), etc.), as well as stimulating industrial efforts at Oxford Instruments to develop new characterization methods (https://afm.oxinst.com/Hf-oxide).
- Author contribution statement
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- Non-English
- No
- English abstract
- -