Epitaxial growth of
γ
-InSe and
α
,
β
, and
γ
-In
2
Se
3
on
ε
-GaSe
- Submitting institution
-
University of Keele
- Unit of assessment
- 12 - Engineering
- Output identifier
- 400
- Type
- D - Journal article
- DOI
-
10.1088/2053-1583/aac479
- Title of journal
- 2D Materials
- Article number
- 035026
- First page
- -
- Volume
- 5
- Issue
- 3
- ISSN
- 2053-1583
- Open access status
- Compliant
- Month of publication
- June
- Year of publication
- 2018
- URL
-
https://iopscience.iop.org/article/10.1088/2053-1583/aac479
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
7
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This paper arose from previous seminal work (2D Materials, 3, 025030 (2016)) and demonstrates the successful growth of heterostructures based on GaSe and InxSey and how to control the phase and the stoichiometry of InxSey during the growth. This work resulted in two conference talks (Graphene Week 2017, and Flatlands beyond Graphene 2017), as well as a successful application for an EPSRC Strategic Equipment grant (EP/T019018/1). This work also recently led to an invitation to write a review article for a special issue on 2D Materials Synthesis in iScience.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
