Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation
- Submitting institution
-
University of Keele
- Unit of assessment
- 12 - Engineering
- Output identifier
- 399
- Type
- D - Journal article
- DOI
-
10.1088/2053-1583/aa61e0
- Title of journal
- 2D Materials
- Article number
- 025043
- First page
- -
- Volume
- 4
- Issue
- 2
- ISSN
- 2053-1583
- Open access status
- Compliant
- Month of publication
- March
- Year of publication
- 2017
- URL
-
https://iopscience.iop.org/article/10.1088/2053-1583/aa61e0
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
8
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This work demonstrated that thin g-InSe layers are chemically stable under ambient conditions, unlike many other 2D materials. However, both thermal- and photo-annealing in air was shown to induce the oxidation of the InSe surface, converting a few surface layers into a stable oxide, In2O3, thus forming an InSe/In2O3 heterostructure with distinct and interesting electronic properties. It demonstrated proof of the limitations and potential of InSe for future technological applications. This work resulted in a successful grant application for the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme under grant agreement 696656.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
