NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1268
- Type
- D - Journal article
- DOI
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10.1109/TED.2017.2742700
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 4011
- Volume
- 64
- Issue
- 10
- ISSN
- 0018-9383
- Open access status
- Compliant
- Month of publication
- September
- Year of publication
- 2017
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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9
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This work, for the first time, proposed a methodology to characterize and model variability for nano-scaled MOSFETs. Its application to the development of an accurate reliability simulator for Malaysia’s electronics industry led to a finalist award for the 2017 Newton Prize (https://www.newtonfund.ac.uk/nf/assets/File/NewtonPrize2017.pdf). The work influenced the strategy of Tektronix, fostering a PhD studentship focused on next-generation characterization facility development and commercialization (K. Wright, Director, Katie.Wright@keithley.com), and resulted in an invited presentation to major CAD companies, including Cadence (Y. Meng, Technical Manager, ymeng1@cadence.com).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -