Percolation threshold enables optical resistive‐memory switching and light‐tuneable synaptic learning in segregated nanocomposites
- Submitting institution
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Nottingham Trent University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 64 - 1110710
- Type
- D - Journal article
- DOI
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10.1002/aelm.201900197
- Title of journal
- Advanced Electronic Materials
- Article number
- 1900197
- First page
- -
- Volume
- 5
- Issue
- 7
- ISSN
- 2199-160X
- Open access status
- Compliant
- Month of publication
- May
- Year of publication
- 2019
- URL
-
-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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4
- Research group(s)
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A - Imaging, Materials and Engineering Centre
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The paper exploits two well-established effects in materials science, percolation and photoexpansion, to give a completely new approach to the optical switching of memristors. The nanowerk portal highlighted the paper as a spotlight article (https://www.nanowerk.com/spotlight/spotid=53008.php). It was consequently promoted by the nanoscience Frogheart blog (https://www.frogheart.ca/?p=28264). The paper led to an invited talk at the “Future Trends in Neuromorphic Electronics” meeting (Loughborough). It is part of a 6-paper body of work that led to a visiting position for Dr Kemp (2020-2021) at the world leading Chua Memristor Center in Dresden (https://cmc-dresden.org/members/).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -